Bandgap narrowing in zincblende III–V semiconductors: Finite-temperature full random-phase approximation and general analytical model

The bandgap narrowing (BGN) in zincblende III–V semiconductors is calculated a finite-temperature full Random-Phase Approximation (RPA) formalism based on an isotropic dispersion model. cases of n-type and p-type quasi-neutral regions the case neutral electron–hole plasma are elaborated for technologically important materials GaAs, AlAs, InAs, GaP, InP, GaSb, InSb, zb-GaN, zb-InN, Al0.3Ga0.7As GaAs0.5Sb0.5, InP0.69Sb0.31, InAs0.4P0.6, InAs0.4Sb0.6, In0.52Al0.48As In0.49Ga0.51P, In0.53Ga0.47As In0.5Ga0.5Sb, zb-Ga0.5In0.5N (60 cases). In regions, correlation energy interaction between carriers ionized dopants adds two terms to total BGN. At low temperatures, inefficient screening makes hole term dominant with large ratio valence band conduction (CB) density-of-states. inclusion CB nonparabolicity decisive here, as it prevents diverging BGN at high concentrations. For all 60 cases, evaluated temperature range from 0 500 K. A strong dependence over whole density observed direct materials. Otherwise, quickly ceases increasing density. An analytical model without material-dependent free fit parameters derived compared full-RPA results.